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M28R400CT-KGD M28R400CB-KGD
Known Good Die 4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory
FEATURES SUMMARY

SUPPLY VOLTAGE - VDD = 1.65V to 2.2V Core Power Supply - VDDQ= 1.65V to 2.2V for Input/Output - VPP = 12V for fast Program (optional) ACCESS TIME: 100ns PROGRAMMING TIME - 10s typical - Double Word Programming Option COMMON FLASH INTERFACE - 64 bit Security Code MEMORY BLOCKS - Parameter Blocks (Top or Bottom location) - Main Blocks BLOCK LOCKING - All blocks locked at Power Up - Any combination of blocks can be locked - WP for Block Lock-Down SECURITY - 64 bit user Programmable OTP cells - 64 bit unique device identifier - One Parameter Block Permanently Lockable AUTOMATIC STAND-BY MODE PROGRAM and ERASE SUSPEND 100,000 PROGRAM/ERASE CYCLES per BLOCK ELECTRONIC SIGNATURE - Manufacturer Code: 20h - Top Device Code, M28R400CT: 882Ah - Bottom Device Code, M28R400CB: 882Bh
Figure 1. Delivery Form
Wafer
June 2004
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M28R400CT-KGD, M28R400CB-KGD
TABLE OF CONTENTS
FEATURES SUMMARY . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Figure 1. Delivery Form . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 SUMMARY DESCRIPTION. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Figure 2. Logic Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Table 1. Signal Names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 FUNCTIONAL SPECIFICATION. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Table 2. Table 3. Table 4. Table 5. Table 6. Table 7. Product Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Read AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Write AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Physical Specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Manufacturing Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
DIE SPECIFICATIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Figure 3. Die Photograph and Pad Location. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Figure 4. Wafer/Die Orientation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Table 8. Pad Extraction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 PRODUCT TEST FLOW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Figure 5. Product Test Flow . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 HANDLING INSTRUCTIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Processing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Storage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 PART NUMBERING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Table 9. Ordering Information Scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 REVISION HISTORY. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Table 10. Document Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
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SUMMARY DESCRIPTION
The M28R400C are available as Known Good Dice. STMicroelectronics defines Known Good Dice as standard products offered as dice and tested for functionality and speed. ST's Known Good Die products are as reliable and of the same quality as products delivered in packages. This datasheet should be read in conjunction with the full M28R400C datasheet. The M28R400C is a 4 Mbit (256Kbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (1.65 to 2.2V) supply. VDDQ allows to drive the I/O pin down to 1.65V. An optional 12V VPP power supply is provided to speed up customer programming. The device features an asymmetrical blocked architecture. The M28R400C has an array of 15 blocks: 8 Parameter Blocks of 4 KWord and 7 Main Blocks of 32 KWord. M28R400CT has the Parameter Blocks at the top of the memory address space while the M28R400CB locates the Parameter Blocks starting from the bottom. The M28R400C features an instant, individual block locking scheme that allows any block to be locked or unlocked with no latency, enabling instant code and data protection. All blocks have three levels of protection. They can be locked and locked-down individually preventing any accidental programming or erasure. There is an additional hardware protection against program and block erase. When VPP VPPLK all blocks are protected against program or block erase. All blocks are locked at power-up. Each block can be erased separately. Erase can be suspended in order to perform either read or program in any other block and then resumed. Program can be suspended to read data in any other block and then resumed. Each block can be programmed and erased over 100,000 cycles. The device includes a 128 bit Protection Register and a Security Block to increase the protection of a system design. The Protection Register is divided into two 64 bit segments, the first one contains a unique device number written by ST, while the second one is one-time-programmable by the user. The user programmable segment can be permanently protected. The Security Block, parameter block 0, can be permanently protected by the user. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller takes care of the timings necessary for program and erase operations. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards. The M28R400C are supplied with all the bits erased (set to `1') Figure 2. Logic Diagram
VDD VDDQ VPP 18 A0-A17 W E G RP WP M28R400CT M28R400CB 16 DQ0-DQ15
VSS
AI04392
Table 1. Signal Names
A0-A17 DQ0-DQ15 E G W RP WP VDD VDDQ VPP VSS Address Inputs Data Input/Output Chip Enable Output Enable Write Enable Reset Write Protect Core Power Supply Power Supply for Input/Output Optional Supply Voltage for Fast Program & Erase Ground
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FUNCTIONAL SPECIFICATION
Refer to the M28R400C (document number 7653 on the ST Internet web site http://www.st.com) for full functional and electrical specifications of the product. Table 2. and Table 3. give the main product specification and operating conditions while Table 4. and Table 5. summarize the Read and Write AC parameters which differ from those given in the M28R400C datasheet. See Table 6. and Table 7. for details of the die's physical specification and manufacturing. Table 2. Product Specification
Product Root Part Number Speed Option Delivery Form M28R400CT M28R400CB 100ns Inked or mapped dice on whole unsawn wafer Die Thickness 725m 3.56 mils x 3.56 mils Bond Pad Size 90.4m x 90.4m Pad Area Free of Passivation Pad per Die - 40C to +85C Bond Pad Metallization Die Backside Value 100 100 25 100 25 30 Unit Passivation ns May be grounded USG, Si3N4 12.67 mils 8172m 46 AlCU, TiN No Metal Die Dimensions, X by Y (without scribe line)
Table 5. Write AC Characteristics
Symbol tAVAV tELQV Description Address Valid to Next Address Valid (min) Chip Enable Low to Output Valid (max) Value 100 100 Unit ns ns
Table 6. Physical Specification
Die Dimensions, X by Y (with scribe line) 141.024 mils x 98.504 mils 3.582mm x 2.502mm 137.008mils x 94.488mils 3.480mm x 2.400mm 9.84 mils
Table 3. Operating Conditions
Supply Voltage Junction Temperature Under Bias Operating Temperature VDD = VDDQ = 1.65V to 2.2V TJ (max) = 125C
Table 4. Read AC Characteristics
Symbol tAVAV tAVQV tEHQZ tELQV tGHQZ tGLQV Description Address Valid to Next Address Valid (min) Address Valid to Output Valid (max) Chip Enable High to Output Hi-Z (max) Chip Enable Low to Output Valid (max) Output Enable High to Output Hi-Z (max) Output Enable Low to Output Valid (max)
Table 7. Manufacturing Information
ns ns ns ns ns Manufacturing Location Die Revision Manufacturing Location Die Revision Wafer Sort and Test Location Manufacturing ID Preparation for Shipment Fabrication Process Catania (M5 fab), Italy - V2 Agrate (R2 fab), Italy - V1 Agrate and Catania, Italy SA2B9AZ Agrate and Catania, Italy 0.18m technology
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M28R400CT-KGD, M28R400CB-KGD
DIE SPECIFICATIONS
Figure 3. Die Photograph and Pad Location 1 10 11 21
46
35
34
22 LOGO
Figure 4. Wafer/Die Orientation
WAFER FRONT SIDE
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
LOGO
AI08416
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M28R400CT-KGD, M28R400CB-KGD
Table 8. Pad Extraction
Pad Number 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 Pad Function A15 A14 A13 A12 A11 A10 A9 A8 W RP VPP WP NC A17 A7 A6 A5 A4 A3 A2 A1 A0 E Pad Placement X -1612.24 -1477.72 -1315.88 -1190.28 -1071.16 -945.56 -783.72 -658.12 -539.00 -377.16 249.16 374.76 536.60 655.72 781.32 943.16 1068.76 1187.88 1313.48 1475.32 1609.84 1636.92 1504.84 Y 1068.60 1068.60 1068.60 1068.60 1068.60 1068.60 1068.60 1068.60 1068.60 1068.60 1068.60 1068.60 1068.60 1068.60 1068.60 1068.60 1068.60 1068.60 1068.60 1068.60 1068.60 -1023.68 -1023.68 Pad Number 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 Pad Function VSS G DQ0 DQ8 DQ1 DQ9 DQ2 DQ10 DQ3 DQ11 VDD DQ4 DQ12 DQ5 DQ13 DQ6 DQ14 DQ7 DQ15 NC VSS VDDQ A16 Pad Placement X 1385.72 1266.60 1141.00 1008.92 889.80 757.72 638.80 506.52 387.40 255.32 136.20 -255.08 -387.16 -506.28 -638.36 -757.48 -889.56 -1008.68 -1140.76 -1266.36 -1385.48 -1504.60 -1636.68 Y -1023.68 -1023.68 -1023.68 -1023.68 -1023.68 -1023.68 -1023.68 -1023.68 -1023.68 -1023.68 -1023.68 -1023.68 -1023.68 -1023.68 -1023.68 -1023.68 -1023.68 -1023.68 -1023.68 -1023.68 -1023.68 -1023.68 -1023.68
Note: 1. All pad placements are referred to the center of the chip and center of the pad. The coordinates can be used to operate wire bonding equipment. 2. NC = Pad not connected. 3. Dimensions are given in microns.
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PRODUCT TEST FLOW
Figure 5. gives an overview of ST's Known Good Die test flow. STMicroelectronics implements quality assurance procedures throughout the product test flow. In addition, an off-line quality monitoring program is imFigure 5. Product Test Flow plemented to ensures that ST's quality standards are met on Known Good Die products. With ST's quality procedures, Known Good Die products can be produced without requiring burnin.
Wafer Sort 1
DC Parameters Functionality Programmability Erasability
BAKE 24 hours at 250C
Data Retention
Wafer Sort 2
DC Parameters Functionality Programmability Erasability
BAKE 12 hours at 250C DC Parameters Functionality Programmability Erasability Speed Visual Inspection Sampling Wafer Pack
ai08366
Wafer Sort 3 High Temperature
Packaging and Shipment
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M28R400CT-KGD, M28R400CB-KGD
HANDLING INSTRUCTIONS
Processing Known Good Die products should not be exposed to ultraviolet light or be processed at temperatures greater than 250C. Failure to adhere to these handling instructions will result in irreparable damage to the devices. For best yield, ST recommends assembly in a Class 10K clean room with 30% to 60% relative humidity. Storage Known Good Die products should be stored at a maximum temperature of 30C in a nitrogenpurged cabinet or a vacuum-sealed bag. All standard ESD (ElectroStatic Discharge) handling procedures should be observed.
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M28R400CT-KGD, M28R400CB-KGD
PART NUMBERING
Table 9. Ordering Information Scheme
Example: Device Type M28 Operating Voltage R = VDD = 1.65V to 2.2V; VDDQ = 1.65V or 2.2V Device Function 400C = 4 Mbit (256Kb x16), Boot Block Array Matrix T = Top Boot B = Bottom Boot Speed 100 = 100ns Packaging D1 = Inked or mapped dice on whole unsawn wafer Temperature Range 6 = -40 to 85 C M28R400C T 100 D1 6
Note:Devices are shipped from the factory with the memory content bits erased to '1'. For a list of available options (Speed and Delivery Form) or for further information on any aspect of this device, please contact the ST Sales Office nearest to you.
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REVISION HISTORY
Table 10. Document Revision History
Date 12-Jun-2003 15-Jun-2004 Version 1.0 2.0 First Issue. Title modified, -KGD suffix added to part number. Revision Details
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2004 STMicroelectronics - All rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States www.st.com
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